Alexander Driskill-Smith, Senior Director of Strategic Memory Planning at Samsung Electronics, talks to AZoM about the Samsung open innovation program in STT-MRAM (SGMI), STT-MRAM technology and ...

“With PMA we are capable of delivering good STT-MRAM performance down to 7×10^-10 write-error-rate with 10 nanosecond pulses using switching currents of only 7.5 microampere. This could never be done ...

A research team, led by Professor Tetsuo Endoh at Tohoku University, has successfully developed 128Mb-density STT-MRAM (spin-transfer torque magnetoresistive random access memory) with a write speed ...

(Nanowerk News) Researchers from National Taiwan University have developed an ultra-high performance STT-MRAM, called SS-MARM or SL-STT-MARM. The SS-MARM can simultaneously achieve ultra-high MR ratio ...

Most parts of present computer systems are made of volatile devices, and the power to supply them to avoid information loss causes huge energy losses. We can eliminate this meaningless energy loss by ...

Nanotechnology research centre imec described an 8nm p-MTJ device at the International Electron Devices Meeting, claiming the part has 100% tunnel magnetoresistance and a coercive field as high as ...

CHANDLER, Ariz.--(BUSINESS WIRE)--Everspin Technologies, Inc. (NASDAQ:MRAM), the world’s leading developer and manufacturer of Magnetoresistive Random Access Memory (MRAM) persistent memory solutions, ...

Spin Transfer Technologies, (STT) and Tokyo Electron (TEL) are to collaborate on developing manufacturing processes for ST-MRAM. The combination of STT’s ST-MRAM technology and TEL’s PVD MRAM ...

MRAM pioneer Everspin Technologies says it recorded revenue for its first 40nm 256Mbit STT-MRAM products in Q4 2017 and is currently ramping to volume production in 2018. STT-MRAM is said by the ...

At the first MRAM Developers Day over 100 people gathered to discuss the current state and future of Magnetic Random Access Memory. New products using MRAM, MRAM product solutions and projections for ...